摘要
用射频等离子体化学气相沉积法（ＲＦ－ＣＶＤ）和ＣＨ４、Ｎ２与Ａｒ组成的混合气体制备掺氮类金刚石薄膜（ａ－Ｃ： Ｈ： Ｎ）．用原子力显微镜（ＡＦＭ）、俄歇电子能谱（ＡＥＳ）、红外光谱（ＩＲ）以及显微拉曼谱（Ｍｉｃｒｏ－Ｒａｍａｎ）对 ａ－Ｃ： Ｈ：Ｎ薄膜的表面形貌、组分和微观结构进行表征．实验结果表明，薄膜中有纳米量级的颗粒存在，而且随反应气体 中Ｎ２与ＣＨ４比值的增大，薄膜中的氮元素含量也随之增大，并主要以Ｃ—Ｎ键和Ｎ—Ｈ键形式存在，少量以Ｃ＝Ｎ 键形式存在．Ｎ２的掺入使类金刚石薄膜中Ｃ—Ｈ键含量降低，ＳＰ３成份增加，
a--C: H: N films were deposited from mixture gases of CH4, N2 and Ar by RFCVD method. The topography, composition and microstructure of the films were characterized by AFM, AES, IR and Micro--Raman. The experimental results show that some nano--grains exist in the films. The content of N in the films increases with the ratio of N2 to CH4 in the mixture gases. A large amount of N, in the films takes the form of C--N and N--H, while a small amount takes the form of C N. Doping of N2 decreases the content of C -- H band in the films and increases the fraction of Sp3.
出处
《上海大学学报（自然科学版）》
CAS
CSCD
2000年第5期391-394,共4页
Journal of Shanghai University:Natural Science Edition
关键词
显微结构
类金刚石薄膜
掺氮
a-C: H: N films
radio frequency plasma chemical vapor deposition (RFCVD)
microstructure
