摘要
对高Al组分AlxGa1-xN(x=50%)进行了ICP刻蚀实验研究,在刻蚀深度相同的前提条件下,对比分析了ICP腔室压力与AlGaN表面损伤之间的相互关系,并讨论了低温热退火对ICP刻蚀损伤的修复作用。XPS测试结果表明,与未经刻蚀的AlGaN表面相比,ICP刻蚀之后的AlGaN表面其表面氮空位VN明显增多,且Al2p、Ga3d等峰位均向高结合能方向漂移。分析讨论发现,ICP腔室压力过小或过大均不利于获得低损伤的刻蚀表面,此外,低温热退火(380℃-200s)对表面氮空位有一定的修复作用,但修复效果较为有限。
In this work, the non-stoichiometric surface of AlxGa1-xN（x=50%） subjected to ICP etching was studied by XPS （X-ray Photoelectron Spectroscopy）. Under the condition of identical etching depth, the effects of ICP pressure on the surface damages of etched A1GaN were investigated, furthermore, the recovery function of low-temperature annealing to nitrogen deficiency （VN） was evaluated. XPS tests show that serious stoichiometry disorder and nitrogen deficiency appear at the A1GaN surface after ICP process, which results in the moving to the higher bind-energy of A12p and Ga3d peaks. This study reveals that moderate ICP pressure is needed to depress the etching damages. Also, it is confirmed that low-temperature annealing （380 ℃-200 s） can recover the nitrogen deficiency partly, but this recovery is not effective enough.
出处
《半导体光电》
CAS
CSCD
北大核心
2013年第1期79-83,87,共6页
Semiconductor Optoelectronics
