期刊文献+

高剂量X射线辐照下碲锌镉探测器的深度极化效应 被引量:3

Further polarization effect of CdZnTe detectors under high flux X-ray irradiation
在线阅读 下载PDF
导出
摘要 采用双向辐照的方法研究了碲锌镉晶体中的深度极化效应,实验结果表明,深度极化效应与直接辐照的X射线剂量无关。通过对晶体内电场分布的模拟,进一步分析了深度极化的形成机制,认为深度极化效应与极化效应一样,都是由于高浓度的堆积电荷使得晶体内电势畸变从而阳极不能收集信号,但它与通常极化效应有所不同,造成这种极化的高浓度空间电荷是从更高浓度的空间电荷区扩散而来的,发生深度极化的区域本身并没有受到X射线的强烈辐照。 It has been observed that pixellated CdZnTe detectors fabricated from crystals experience a further polarization effect. In this case, in some areas of the CdZnTe detector, polarization occurs without high incident flux. Results from these studies reveal that at very high photon flux rates, a space charge region with high density develops and extends, consistent with the accumulation of positive space charge clue to the trapping of free-carrier holes created by the X ray irradiation. The further po- larization is caused by the extending of space charge region. The extending of space charge region observed without high Xray has a direct influence on the irradiation hardness and charge collection efficiency of the devices.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2013年第3期773-777,共5页 High Power Laser and Particle Beams
基金 国家自然科学基金项目(10876044) 中央高校基本科研业务费专项资金项目(CDJXS11122219)
关键词 X射线探测器 CdZnTe探测器 高剂量X射线 极化效应 X ray detector CdZnTe detector high flux X-ray polarization effect
  • 相关文献

参考文献13

  • 1Bolotnikov A E,Camarda G S,Cui Y. Rejecting incomplete charge-collection events in CdZnTe and other semiconductor detectors[J].Nuclear Instruments and Methods in Physics Research A:Accelerators,Spectrometers,Detectors and Associated Equipment,2012.317-323.
  • 2Franc J,Grill R,Kubát J. Factors limiting lifetime of charge carriers in semi-insulated CdTe under high radiation flux[J].Nuclear Instruments and Methods in Physics Research A:Accelerators,Spectrometers,Detectors and Associated Equipment,2011.95-96.
  • 3Wang X,Xiao S,Li M. Intensifying process of polarization effect within pixcllated CdZnTe detectors for X-ray imaging[J].Chinese Optics of Letters,2011.070401.
  • 4黎淼,肖沙里,张流强,曹玉琳,陈宇晓,沈敏,王玺.基于CdZnTe像素阵列探测技术的伽玛源成像[J].强激光与粒子束,2010,22(9):2165-2170. 被引量:8
  • 5Guerra P,Santos A,Darambara D G. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging[J].Journal of Physics D:Applied Physics,2009.175101.
  • 6Wangerin K,Du Y,Jansen F. CdZnTe performance for different anode pixel geometries and data corrections[J].Nuclear Instruments and Methods in Physics Research A:Accelerators,Spectrometers,Detectors and Associated Equipment,2011.37-41.
  • 7Bolotnikov A E,Babalola S,Camarda G,S. Characterization of a 15-mm long virtual Frisch-grid CdZnTe detector array[A].2009.744909.
  • 8Strassburg M,Schroeter C,Hackenschmied P. CdTe CdZnTe under high flux irradiation[J].Journal of Instrumentation,2011.C01055.
  • 9Bale D S,Soldner S A,Szeles C. A mechanism for dynamic lateral polarization in CdZnTe under high flux X-ray irradiation[J].Applied Physics Letters,2008.082101.
  • 10Soldner S A,Bale D S,Szeles C. Dynamic lateral polarization in CdZnTe under high flux X ray irradiation[J].IEEE Transactions on Nuclear Science,2007,(05):1-6.

二级参考文献27

共引文献8

同被引文献44

  • 1南瑞华,介万奇,查钢强,白旭旭,王蓓,于晖.热激电流谱确定CZT:In中的陷阱能级(英文)[J].中国有色金属学会会刊:英文版,2012,22(S1):148-152. 被引量:1
  • 2孙海燕,邵楠.对影响碲锌镉晶片红外透过率因素的研究[J].激光与红外,2005,35(5):348-351. 被引量:6
  • 3LiGuoqiang,ZhangXiaolu,HuaHui,etal.Modifiedverticalbridgmanmethodforgrowthofhigh-qualityCd1-xZnxTecrystals[J].J Elec ton Maer,,2005,34(9):1215-1217.
  • 4ZhaM,ZappettiniA,CalestaniD,etal.FullencapsulatedCdZnTecrystalsbytheverticalBridgmanmethod[J].Crys Growh,2008,310(7/9):2072-2074.
  • 5Washington A L, Teague L C, Duff M C, et ah Atmospheric effects on the performance of CdZnTe single crystal detectors[J]. Elecron Ma er, 2010,39(7) : 1104-1105.
  • 6Szeles C. CdZnTe and CdTe materials for X ray and gamma ray radiation detector applications[J]. PAys Star Sol B, 2004, 241 (3) : 783.
  • 7Sordo S D, Abbene L, Caroli E, et al. Progress in the developnent of CdTe and CdZnTe semiconductor radiation detectors for astrophysical and medical applications[J]. Selsors, 2009,9:3506-3507.
  • 8Bolomikov A E, Camarda G C, Carini G A, et al. Performance characteristics of Frisch ring CdZnTe detectors[J]. IEEE Trans Nucl Sci, 2006,53(2) : 607-608.
  • 9Prettyn, ana T Ⅱ, lanakieva K D, Soldnerb S A, et al. Effect of differential bias on the transport of electrons in coplanar grid CdZnTe detec tors[J]. Nuct Insteum Meth A, 2002,476:658-660.
  • 10Montnaont G, Gentet M C, Monnet O, et al. Simulation and design of ortlaogonal capacitive strip CdZnTe detectors[J].IEEE Jrans Nuc Sci, 2006,54:855-856.

引证文献3

二级引证文献9

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部