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Ba0．6Sr0．4TiO3薄膜的耐压特性研究 被引量：2

Study on Voltage-Withstand Property of Ba_(0.6)Sr_(0.4)TiO_3 Thin Films
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摘要 采用射频磁控溅射法制备了Ba0.6Sr0.4TiO3(BST)薄膜,研究了基片、退火温度及膜厚对薄膜耐压特性的影响。结果显示,铝酸镧(LaAlO3)基片上制备的BST薄膜表面较平整,有较好的耐压;随着退火温度从750℃提高到850℃,BST薄膜晶粒长大,电击穿概率有所增加,750℃是一个较合理的退火温度。在优化的工艺条件下,BST薄膜耐压可达125V/μm。 Ba0.6 Sr0.4 TiO3 （BST） thin films were prepared by radio-frequency magnetron sputtering method and the effect of the substrate,anneaIing temperature and film thickness on the voltage-withstand property was studied. The result shows that the BST thin films deposited on LaAIO2 substrates has smoother surface and higher voltagewithstand property. The crystalline grain size of the BST thin film become larger with the annealing temperature increased from 750 ℃ to 850 ℃ ,and the electrical breakdown probability has been increased to some extent. In our re- suits,750 ℃ is a more reasonable temperature for the films annealing. At the optimized process, BST thin film can withstand more than 125 V/μm.
作者 朱斌 张洪波 王文君 李司中 赵强 陈宏伟 杨传仁 张继华
机构地区 电子科技大学电子薄膜与集成器件国家重点实验室
出处 《压电与声光》 CSCD 北大核心 2013年第1期112-115,共4页 Piezoelectrics & Acoustooptics
基金 国家自然科学基金资助项目(51172035)
关键词 BA0 5Sr0 4Ti03(BST)薄膜 铁电 耐压 集成电容 BST films ferroelectric voltage withstand integrated capacitor
分类号 TM215.3 [一般工业技术—材料科学与工程] TN384 [电子电信—物理电子学]
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参考文献19

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同被引文献26

  • 1赵莉,杨传仁,冷文建,陈宏伟,符春林,廖家轩,高志强.退火工艺对钛酸锶钡薄膜结构的影响[J].电子元件与材料,2004,23(10):17-19. 被引量：9
  • 2林明通,陈国荣,杨云霞,肖田,楼均辉.溅射工艺参数对Ba_(0.5)Sr_(0.5)TiO_3薄膜沉积速率和介电性能的影响[J].真空,2005,42(6):39-42. 被引量：7
  • 3唐逸,杨春生,张丛春.氧分压对磁控溅射BST薄膜及其介电性能的影响[J].上海交通大学学报,2006,40(1):108-111. 被引量：6
  • 4林明通,陈国荣,杨云霞,肖田,陈晨曦.氧气含量对射频磁控溅射Ba_(0.5)Sr_(0.5)TiO_3薄膜介电性能的影响[J].硅酸盐学报,2006,34(5):593-595. 被引量：1
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  • 8Zhijun Ma,Tianjin Zhang, Miao He, et al. Crystallization and electrical properties of Ba0.7 Sr0.3 TiO3 thin films on SrRuO3/Pt hybrid bottom electrode [ J ]. Journal of Materials Science : Materials in Electronics, 2011,22 ( 1 ) : 35 -39.
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压电与声光
2013年 第1期

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