摘要
本文报导半绝缘GaAs:Cr的低压和低频电流振荡现象,在室温下系统地测量电流和电压关系的伏安特性,并进一步研究在红外和可见光辐照下的振荡规律,分析了深能级俘获过程对导带内电子浓度和迁移率的影响。
The paper presents the phenomena of the low voltage and low frequency current oscillation in semi-insulating GaAs:Cr.At room temperature the Ⅰ-Ⅴ characteristics are systematically measured. The oscillating behaviors for infrared and visible radiation are further investigated. The deep level trapping processes which depend on the the effects of electron concentration and mobility in conduction band are analysed.
出处
《北京大学学报（自然科学版）》
CAS
CSCD
北大核心
1991年第5期599-607,共9页
Acta Scientiarum Naturalium Universitatis Pekinensis
