摘要
利用注入锁定技术实现了与自由运转频率相差１３００ ＧＨｚ 的大功率半导体激光器的边模注入锁定．实验上利用饱和吸收谱和光学外差拍方法详细研究了锁定后主从激光器之间的相干转移特性，并测量了注入光功率与锁频范围的关系和注入锁定模式建立过程，与利用带注入项的多模速率方程得到的边模注入锁定的范围相吻合．理论上计算了实现边模注入锁定所满足的注入光阈值条件。
The high power semiconductor lasers were side\|mode injection locked with frequency difference 1300?GHz with respect to its free working frequency using injection locking technique.The transfer of coherent characteristic between the master laser and slave laser was studied experimentally in detail by using saturated absorption spectra and optical heterodyne technique.The relation of locking bandwidth versus the ratio of injection power and the mode building process of injection locking were measured,and the experimental locking bandwidth agreed with the side\|mode locking bandwidth obtained by multi\|mode rate equation followed by injection term.The threshold injection light power for realizing side\|mode injection locking was calculated theortically and tested by experiment.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第1期85-93,共9页
Acta Physica Sinica
