摘要
制备了Au SiO2 Si结构MIS隧道发光结 .测试并分析了该结的发光特性及电流 电压 (I V)特性 .指出结的发光是由各膜层界面激发的表面等离极化激元 (SurfacePlasmonPolariton .SPP)与膜层表面粗糙度相互耦合的结果 .观察到MIS结I V特性中存在的负阻现象 ,采用SPP对电子的束缚模型对这一现象进行了初步分析 .利用原子力显微镜(AFM)对结的表面形貌进行了观测 。
The Au SiO\-2 Si thin film MIS(Metal Insulator Semiconductor)tunnel junction was fabricated.The light emission property and I\|V characteristic of this junction were measured and analyzed.Result indicated that the light emission was due to the excitation of Surface Plasmon Polariton(SPP)and the couple of SPP with the surface roughness subsequently in the MIS system.We observed the negative resistance phenomenon(NRP) in the I\|V curve of this MIS junction,which was explained by the electrons bonding model. We also got the AFM(atomic force microscopy)photo of the surface of MIS junction, by which the relation among the electrons tunneling, the excitation of SPP,and the light emission of the MIS junction was discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第6期1159-1162,共4页
Acta Physica Sinica
基金
国家自然科学基金!(批准号 :5 99770 0 2 )资助的课题&&
