摘要
为了实现半导体激光器的单侧模稳定工作,提出了一种在激光器的脊条两侧引入光子晶体结构滤除半导体激光器高阶侧模的方法。通过调整激光器上表面的刻蚀深度、光子晶体区域的条宽和间隔来改变激光器内部的模场分布,同时结合选择性的载流子注入来增强基模的激射优势,进而减少侧模的数量。实验上制作了主脊条宽度为6μm,光子晶体周期5μm,波长1 550 nm的半导体激光器。测试结果表明:在连续工作的情况下,电流300 mA的时候,高阶侧模受到抑制,水平发散角变为10.2°,证实了光子晶体结构调制激光器侧模的可行性。
In order to achieve single lateral mode of the semiconductor laser, the methad was proposed to filter high-order lateral modes by introducing photonic crystal structures on both sides of ridge semiconductor laser. By adjusting the etching depth of the laser on the surface of the laser, and ridge width and spacing of photonic crystal region, the mode field distribution inside the laser was changed, combined with selective carrier injection to enhance the fundamental mode lasing advantage, thereby the numbers of the lateral mode were reduced. 1 550 nm wavelength semiconductor lasers were produced experimentally, and the width of the main ridge was 6 μm, and the period of photonic crystal region was 5 μm. Test results show that when the current was 300 mA in CW, the higher-order lateral modes were suppressed, and divergence angle was reduced to 10.2°. It is confirmed that it is feasible to modulate lateral modes of semiconductor laser by photonic crystal structures.
出处
《红外与激光工程》
EI
CSCD
北大核心
2013年第1期69-72,共4页
Infrared and Laser Engineering
基金
国家高技术研究发展计划(2011CB922002
2012CB933501)
国家自然科学基金(61025025
61137003
60838003)
关键词
光子晶体
侧模
半导体激光器
photonic crystal
lateral mode
semiconductor laser
