摘要
研究结果表明 ,硼硅玻璃料的掺入超过一定量时会使压敏电场上升。当玻璃料含量占初始配方总质量的 5 %时 ,压敏电场最小 ,非线性系数最小 ,漏电流最大 ;当玻璃料含量占 5 %～ 10 %时 ,随玻璃料掺入量的增加 ,非线性系数明显上升 ,漏电流迅速减小 ,压敏电场迅速上升。
ELECTRONIC COMPONENTS & MATERIALS (China), Vol 19, No 3, P 1 2 (Jun 2000) In Chinese The effects of borosilicate glass dopant on the electronic properties of ZnO varistors are investigated. The results show that when borosilicate glass dopant amount is 5% of the total, breakdown electrical field and nonlinear coefficient reach their minimum values and leakage current reaches its maximum value; when the amount between 5% and 10%, breakdown electrical field and nonlinear coefficient rise rapidly and leakage current reduces greatly with the increase of borosilicate glass dopant amount. (5 refs.)
出处
《电子元件与材料》
CAS
CSCD
2000年第3期1-2,共2页
Electronic Components And Materials
