摘要
CH_4/H_1混合气可以在室温下对InP进行反应离子腐蚀.由于腐蚀反应过程产生一定的淀积物,有利于增加图形侧墙腐蚀的钝化保护,实现垂直腐蚀,并能提高掩模的掩蔽作用.实验结果说明这是比较实用的一种腐蚀气体系统.对这个腐蚀系统进行了系统的实验,说明气体成分、工作气压、气体流量、射频功率以及掺入氩气对腐蚀效果的影响.
CH_4/H_2 mixtures can be used for reactive ion etching of InP at room temperature.Due toformation of polymer deposits during etching reaction, it is advantageous in sidewall protectionand enhancement of mask.Results of experiments show that it is a promising etching gas sys-tem. Systematic experiments have illustrated affects of gas composition,pressure, flow rate,power density and adding of agron on results of etching.
