摘要
淀积在SiO_2上的共溅射W-Si 薄膜,在高纯N_2中经200—1100℃的10秒钟快速热退火,用转靶X射线衍射、激光喇曼光谱、俄歇电子能谱、扫描电子显微镜、透射电子显微镜、四探针测量等不同手段研究了钨硅化物的形成.565℃退火出现了W_5Si_3相,退火温度高于755℃,稳定相WSi_2形成,但W_5Si_3相并不消失,一直与WSi_2共存.经考查,W_5Si_3的存在并不是由于在薄膜淀积或是退火形成硅化物的过程中引起缺硅而造成的,它对薄层电阻仅起部分影响作用,材料的电学性质最终仍由具有最低电阻率的稳态WSi_2相决定。WSi_2与W_5Si_3相高温热氧化时都不稳定,会分解并被氧化成SiO_2和WO_3。
Cosputtered W-Si films on SiO_2 were rapidly thermally annealed in high purity N_2 at tem-peratures ranging from 200 to 1100℃ for 10 s.Formation of tungsten silicide has been studiedby means of XRD, Raman Scattering,AES, SEM, TEM and four-point probe measurment.W_5Si_3 phase appears in films annealed at 565℃. When the annealing temperature is higher than755℃, stable phase WSi_2 is formed,but W_5Si_3 does not disappear,all along coexists withWSi_2.Experiments show that the existance of W_5Si_3 is not cause from lack of silicon duringfilm deposition and annealing to form silicide.W_5Si_3 contributes only partly to the sheet lesi-stance,the electric properity of material is controlled by stable WSi_2 phase with minimal resi-stivity.WSi_2 and W_5Si_3 phases are not stable at high temperature oxidation,they react to formSiO_2 and WO_3.
基金
江苏省科学技术委员会
