摘要
本文报道了CaAs∶Er、InP∶Yb发光样品的二次离子质谱、X-射线双晶衍射测量结果及其与Er离子的表面成份的关系.分析讨论了退火损伤对GaAs∶Er和InP∶Yb发光的影响以及Er^(3+)复合体发光中心模型.
The photoluminescences of Er^+ or Yb^+-implanted GaAs and InP after annealing is repo-rted. The surface distribution of Er ions in GaAs: Er annealed samples is analysed by secon-dary ion mass spectroscopy (SIMS), and the rocking curves of the related luminescent samplesare measured by X-ray double crystal diffraction for GaAs: Er, InP:Er and InP:Yb. The ef-fects of the annealing damages on the luminescences of GaAs: Er and InP:Yb are investigated,and the luminescent center model of Er^(3+) complex is discussed.
基金
国家自然科学基金
关键词
稀土离子
注入
GAAS
INP
光致发光
Rare earth ion
GaAs
InP
Photoluminescence
Luminescent center
