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液位沉降法制备AZO薄膜及其光电性能研究

Preparation of AZO Thin Films by Level Sedimentation and Research of its Optical and Electrical Properties
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摘要 以二水乙酸锌为原料,乙二醇甲醚和无水乙醇为溶剂,乙醇胺为稳定剂,六水合氯化铝为掺杂剂,合成AZO前驱液,采用自制的液位沉降装置在玻璃衬底上制备AZO薄膜,用XRD、UV—Vis、AFM、四探针、台阶仪等方法对薄膜进行表征,结果表明,应用液位沉降法制备AZO薄膜的优化条件为:溶胶浓度为0.5mol/L、Al3+/Zn2+浓度比为4at%、干燥温度100℃、干燥时间10min、预处理温度450℃、镀膜层数为20层、液位沉降速度为5cm/min、预处理时间为10min、550℃退火2h,得到薄膜透光率为88%,方块电阻为536Ω/□。 Taking zinc acetate dihydrate as raw materials, ethylene glycol monomethyl ether and ethanol as solvent, ethanolamine as stabilizer, hexahydrate aluminum chloride as dopant, synthesized AZO precursor solution. The AZO thin films were prepared on glass substrates by using serf-made liquid level settlement device. Characterized the fihns by XRD, UV-Vis, AFM, four-probe, step profiler and other methods. The results showed that the application level settlement of the optimal conditions for preparation of AZO thin films were as follows: the Sol concentration was 0.5mol/L, the Al3+/Zn2+ concentration ratio was 4at%, the drying temperature was 100℃ for 10min, the pretreatment temperature was 450℃, the coating layers were 20 layers, the level settling velocity was 5cm/min, the pretreatment time was 10min, annealed at 550℃] for 2h. The Average transmittance in visible light and the sheet resistance of the AZO thin films were 88% and 536Ω/□ respectively.
出处 《纳米科技》 2012年第6期28-32,43,共6页
基金 北京市教育委员会科技计划面上项目(项目号:KM201110017004)
关键词 液位沉降法 AZO薄膜 光电性能 level sedimentation AZO thin film optical and electrical properties
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