摘要
利用有效质量近似、传递矩阵方法结合边界条件计算了多势垒结构中电子的一维定态薛定谔方程,数值计算了电子穿过矩形势垒的透射概率与电子纵向能量的关系,并以Ga1-xAlxAs/GaAs超晶格结构为例,对多势垒中电子输运的几个基本现象作了说明.分析了势垒的数目和宽度对El-ln T曲线的影响,共振隧穿的产生原因以及势垒数与共振劈裂尖峰数的关系等.
In this paper, using the effective mass approximation and the transfer matrix method, Schrodinger equation in multi-barrier structure with boundary conditions electron one-dimensional is calculated, and the relationship between probability of electron transmitting through a rectangular barriers and electron longitudinal energy is computed numerically. Taking Ga1-xAlxAs/GaAs superlattice structure for example,the multi-barrier electron transport several basic phenomenas are explained. The effect of the number and width of potential barriers on the E1-lnT curve is analyzed. The reason of resonant tunneling and the relationshlp between the number of potential barriers and peak number of resonance spikes are studied.
出处
《河南科学》
2012年第12期1710-1715,共6页
Henan Science
关键词
传递矩阵
超晶格结构
势垒
势阱
transfer matrix
superlattice structure
potential barrier： potential well
