摘要
本文描述双极-MOS(BiMOS)功率半导体器件的基本结构和特性。重点介绍新型电力电子器件IGBT和MCT。并对双极晶体管、VDMOS和IGBT的性能进行了比较。
The basic structures and characteristics of BiMOS power devices are presented in this paper. The emphasis is put on the new power electronic devices——IGBT and MCT. Performances of bipolar transistor, VDMOS and IGBT have been compared.
出处
《半导体情报》
1991年第4期23-30,共8页
Semiconductor Information
关键词
双极晶体管
场效应晶体管
电子器件
Bipolar transistor
MOS field effect transistor
Power electronic device
