摘要
采用等离子体辅助分子束外延(PA-MBE)研究了Al金属插入层对Si(111)衬底上AlN薄膜材料生长的影响。结果证明,Al插入层可改善AlN外延层的晶体质量,而且引入Al预扩散机制可消除外延表面的孔隙。同时,采用AlN插入层预扩散有利于获得Al极性的AlN,否则倾向于获得N极性的AlN。
The influence of Al interlayer on the growth of AlN on Si（111） substrate was studied by using PA-MBE.It is found that the AlN crystalline quality is improved by introducing the Al interlayer,and the holes on epitaxial surface can be eliminated by adopting a pre-diffusing process.Futhermore,the AlN grown with pre-diffusing Al interlayer proves to be Al-polar,otherwise presenting N-polar characteristics.
出处
《半导体光电》
CAS
CSCD
北大核心
2012年第6期826-829,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(61176015
51002085)
