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ZnO材料的化学溶液法制备及其微结构和光学性质研究 被引量:1

MICROSTRUCTURAL AND LUMINESCENT PROPERTIES OF ZNO PREPARED BY CHEMICAL SOLUTION GROWTH METHOD
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摘要 以等摩尔浓度的乙酸锌和六次甲基四胺溶液为生长液,采用化学溶液法,在70℃生长4 h,在硅片上制备了不同形貌的氧化锌纳米结构。运用X射线衍射(XRD)、扫描电子显微镜(SEM)和室温光致发光谱(PL)研究了样品的结构、形貌和光学性质。结果表明,氧化锌的生长分为种子层的制备和溶液法生长两步。所有的样品都具有相似的光谱,在380 nm附近有一个明显的紫外自由激子发射峰。 In this thesis, ZnO nanostructures with different morphologies were synthesized on silicon substrates by chemical solution growth method from Zinc acetate and methenamine aqueous solution at 70 ℃for 4 h. Its morphologies by SEM and its crystal structures by XRD were studied. Its photoluminescence spectrum was also measured. And possible mechanisms of the growth and the photolumineseence of ZnO were proposed to explain the experimental result. A two-step procedure was employed to fabricate ZnO films in our experiment. One is the fabrication of the seed layer. The other is the chemical bath deposition. All the samples had similar ultraviolet light peak at about 380 nm.
出处 《南阳理工学院学报》 2012年第2期5-7,共3页 Journal of Nanyang Institute of Technology
关键词 氧化锌 化学溶液沉积 光致发光 生长机制 zinc oxide chemical solution growth method photoluminescence growth mechanisms
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同被引文献7

  • 1许磊,廖蕾,李金钗,王多发,卢红兵.ZnO多枝纳米棒水热法生长及其光学性质[J].武汉大学学报(理学版),2006,52(3):315-318. 被引量:5
  • 2L.Vayssieres.Growth of Arrayed Nanorods and Nanowires of ZnO from Aqueous Solutions[J].Adv Mater.2003(5)
  • 3J.Y Lee,Y.S Choi,J.H Kim,M.O Park,S Im.Optimizing n-ZnO/p-Si heterojunctions for photodiode applications[J].Thin Solid Films.2002
  • 4H.Haneda,T.Sekiguchi,N.Ohashi,I.Sakaguchi,K.Koumoto.Low‐Temperature Fabrication of Light‐Emitting Zinc Oxide Micropatterns Using Self‐Assembled Monolayers[J].Adv Mater.2002(6)
  • 5S. Liang,H. Sheng,Y. Liu,Z. Huo,Y. Lu,H. Shen.ZnO Schottky ultraviolet photodetectors[J].Journal of Crystal Growth.2001(2)
  • 6Yefan Chen,Darren Bagnall,Takafumi Yao.ZnO as a novel photonic material for the UV region[J].Materials Science & Engineering B.2000(2)
  • 7N.W Emanetoglu,C Gorla,Y Liu,S Liang,Y Lu.Epitaxial ZnO piezoelectric thin films for saw filters[J].Materials Science in Semiconductor Processing.1999(3)

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