摘要
利用Geant4程序模拟了270keV、500keV4He离子垂直入射到Au、Ag、Cu薄膜的卢瑟福背散射谱(RBS),讨论了材料、厚度和入射离子能量对背散射谱的影响。对比不同能量4He离子的背散射谱,能量较大的4He离子进行薄膜背散射元素分析具有较好的质量分辨率。
The Rutherford Backseattering spectra （RBS） for 270keV ,500keV^4 He normally incident on Au, Ag,Cu thin films are simulated nsing Geant4 Effects on RBS with different materials,thickness and energy, have been discussed. The characters of ^4He RBS are analyzed,and it is found that mass resolution is much better for 500keV ^4He RBS.
出处
《黑龙江科学》
2013年第1期22-24,共3页
Heilongjiang Science
