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Development of a novel accelerometer based on an overlay detection bridge

Development of a novel accelerometer based on an overlay detection bridge
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摘要 This paper describes the design, simulation, processing and test result of a high sensitivity accelerometer based on the piezoresistive effect which uses an overlay bridge detection method. The structure of this accelerometer is supersymmetric "mass-beams". This accelerometer has 8 beams, where two varistors are put in the two ends. Four varistors compose a Wheatstone bridge and the output voltages of the 4 Wheatstone bridges have been superimposed as the final output voltage. The sensitivity of the accelerometer can be improved effectively by these clever methods. A simplified mathematical model has been created to analyze the mechanical properties of the sensor, then the finite element modeling and simulation have been used to verify the feasibility of the accelerometer. The results show that the sensitivity of the accelerometer is 1.1381 mV/g, which is about four times larger than that of the single bridge accelerometers and series bridge sensor. The bandwidth is 0-1000 Hz which is equal to that of the single bridge accelerometers and the series bridge sensor. The comparison reveals that the new overlay detection bridge method can improve the sensitivity of the sensor in the same bandwidth. Meanwhile, this method provides an effective method to improve the sensitivity of piezoresistive sensors. This paper describes the design, simulation, processing and test result of a high sensitivity accelerometer based on the piezoresistive effect which uses an overlay bridge detection method. The structure of this accelerometer is supersymmetric "mass-beams". This accelerometer has 8 beams, where two varistors are put in the two ends. Four varistors compose a Wheatstone bridge and the output voltages of the 4 Wheatstone bridges have been superimposed as the final output voltage. The sensitivity of the accelerometer can be improved effectively by these clever methods. A simplified mathematical model has been created to analyze the mechanical properties of the sensor, then the finite element modeling and simulation have been used to verify the feasibility of the accelerometer. The results show that the sensitivity of the accelerometer is 1.1381 mV/g, which is about four times larger than that of the single bridge accelerometers and series bridge sensor. The bandwidth is 0-1000 Hz which is equal to that of the single bridge accelerometers and the series bridge sensor. The comparison reveals that the new overlay detection bridge method can improve the sensitivity of the sensor in the same bandwidth. Meanwhile, this method provides an effective method to improve the sensitivity of piezoresistive sensors.
出处 《Journal of Semiconductors》 EI CAS CSCD 2013年第2期52-59,共8页 半导体学报(英文版)
基金 Project supported by the National Science and Technology Cooperation Program of China(No.61011140351) the National High Technology Research and Development Program of China(No.2011AA040404) the National Natural Science Foundation of China(No. 61127008)
关键词 ACCELEROMETER MEMS PIEZORESISTIVE overlay detection bridge accelerometer MEMS piezoresistive overlay detection bridge
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  • 1[1]Yazdi N,Ayazi F,Najafi K.Micromachined inertial sensors[J].Proc IEEE,1998,86:164021659.
  • 2[2]Bao Min-Hang.Micro mechanical Transducers:Pressure sensors,Accelerometers and Gyroscopes[M].Amsterdam:Elsevier,2000:281-285.
  • 3[3]Chau K,Lewis S R,Zhao Y,et al.An integrated force balanced capacitive accelerometer for low-g applications[J].Sensors and Actuators A:Physical,1996,54 (1/2/3):472-476.
  • 4[4]Suminto J.A wide frequency range,rugged silicon micro accelerometer with over range stops[C] //9th IEEE Int Workshop on Micro Electro Mechanical Systems.San Diego,CA,1996:180-185.
  • 5[5]Huang Shusen,Li Xinxin,Wang Yuelin,et al.A piezoresistive accelerometer with axially stressed tiny beams for both much increased sensitivity and much broadened frequency bandwidth[C]//The 12th International Conference on Solid State Sensors,Actuators and Microsystems.Boston:IEEE.2003:91-94.
  • 6[6]Tschan T,de Rooij N,Bezinge A,et al.Characterizalion and modelling of silicon piezoresistive accelerometers fabricated by a bipolar-compatible process[J] Sensots and Actuators A:Physical,1991,27(1/2/3):605-609.
  • 7[7]Sim J H,Kim D K,Bae Y H,et al.Six-beam piezoresistive accelerometer with self-cancelling cross-axis sensitivity[J].Electron Lett,1998,34(5):497-506.
  • 8[8]Amarsinghe R,Dao D V,Toriyama T,et al.Design and fabrication of miniaturized six-degree of freedom piezoresistive Accelerometer[C]//MEMS 2005 18th IEEE International Conference.Florida,USA,2005:351-354.
  • 9[9]Plaza J A,Dominguez C,Esteve J,et al.BESOI-based integrated optical silicon accelerometer[J].J Microelectromech Syst,2004,13(2):355-364.
  • 10[10]Roylance L M.A batch-fabricated silicon accelerometer[J].IEEE Trans Electron Devices ED,1979,26(12):1911-1918.

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