摘要
A brief review is presented,which includes the direct current,alternate current,electrical and thermoelectrical transport as well as spin transfer effect in a variety of spin-based nanostructures such as the magnetic tunnel junction(MTJ),ferromagnet(FM)-quantum dot(QD)/FM-FM,double barrier MTJ,FM-marginal Fermi liquid-FM,FM-unconventional superconductor-FM(FUSF),quantum ring and optical spin-field-effect transistor.The magnetoresistances in those structures,spin accumulation effect in FM-QD-FM and FUSF systems,spin injection and spin filter into semiconductor,spin transfer effect,photon-assisted spin transport,magnonassisted tunneling,electron-electron interaction effect on spin transport,laser-controlled spin dynamics,and thermoelectrical spin transport are discussed.
A brief review is presented, which includes the direct current, alternate current, electrical and thermoelectrical transport as well as spin transfer effect in a variety of spin-based nanostructures such as the magnetic tunnel junction （MTJ）, ferromagnet（FM）-quantum dot （QD）/FM-FM, double barrier MTJ, FM-marginal Fermi liquid-FM, FM-unconventional superconductor-FM （FUSF）, quantum ring and optical spin-field-effect transistor. The magnetoresistances in those structures, spin accumulation effect in FM-QD-FM and FUSF systems, spin injection and spin filter into semiconductor, spin transfer effect, photon-assisted spin transport, magnon- assisted tunneling, electron-electron interaction effect on spin transport, laser-controlled spin dynamics, and thermoelectrical spin transport are discussed.
基金
supported in part by the National Science Fund for Distinguished Young Scholars of China(Grant No. 10625419)
the National Natural Science Foundation of China(Grant Nos. 90922033 and 10934008)
the Ministry of Science and Technology of China (Grant Nos.2012CB932900 and 2013CB933401)
the Chinese Academy of Sciences,China,the DFG and the state of Saxony-Anhalt,Germany
