Enhancement of the Curie temperature of ferromagnetic semiconductor(Ga,Mn)As 被引量：2

Enhancement of the Curie temperature of ferromagnetic semiconductor(Ga,Mn)As

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摘要 In this review article,we review the progress made in the past several years mainly regarding the efforts devoted to increasing the Curie temperature(T C) of(Ga,Mn)As,which is most widely considered as the prototype ferromagnetic semiconductor.Heavy Mn doping,nanostructure engineering and post-growth annealing which increase T C are described in detail. In this review article, we review the progress made in the past several years mainly regarding the efforts devoted to increasing the Curie temperature （Tc） of （Ga,Mn）As, which is most widely considered as the prototype ferromagnetic semiconductor. Heavy Mn doping, nanostructure engineering and post-growth annealing which increase Tc are described in detail.

作者 WANG HaiLong CHEN Lin ZHAO JianHua

机构地区 State Key Laboratory of Superlattices and Microstructures

出处《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2013年第1期99-110,共12页 中国科学：物理学、力学、天文学（英文版）

基金 supported by the National Natural Science Foundation of China (Grant Nos.60836002,11127406 and 10920101071)

关键词 magnetic semiconductors magnetic properties of nanostructures magnetotransport phenomena molecular-beam epitaxy 居里温度铁磁半导体 Mn Ga 磁性半导体结构工程重掺杂 Tc

分类号 TN304.7 [电子电信—物理电子学]

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参考文献72

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同被引文献26

1曹强,邓江峡,刘国磊,陈延学,颜世申,梅良模.Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy[J].Chinese Physics Letters,2007,24(10):2951-2954. 被引量：1
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引证文献2

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2Qiang Cao,Shishen Yan.The predicaments and expectations in development of magnetic semiconductors[J].Journal of Semiconductors,2019,40(8):9-19. 被引量：1

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Enhancement of the Curie temperature of ferromagnetic semiconductor(Ga,Mn)As 被引量：2

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