摘要
Mixed-valence manganites have attracted considerable research focus in recent years not only because of the potential application of colossal magnetoresistance(CMR) in magnetic devices,but also because of many intriguing physical properties observed in these materials.Doping elements at A-site can alter the filling of 3d Mn band and the tolerance factor.Therefore the hole-and electron-doped CMR manganites exhibit a rich phase diagram.In addition,more theoretical and experimental results suggest that phase separation is a critical factor for the understanding of CMR phenomena.Recently,there is an increasing interest in the fabrication and investigation on manganite-based heterojunction,which demonstrated excellent rectifying property,large MR,and photovoltaic effect.
Mixed-valence manganites have attracted considerable research focus in recent years not only because of the potential applica- tion of colossal magnetoresistance （CMR） in magnetic devices, but also because of many intriguing physical properties ob- served in these materials. Doping elements at A-site can alter the filling of 3d Mn band and the tolerance factor. Therefore the hole- and electron-doped CMR manganites exhibit a rich phase diagram. In addition, more theoretical and experimental results suggest that phase separation is a critical factor for the understanding of CMR phenomena. Recently, there is an increasing in- terest in the fabrication and investigation on manganite-based heterojunction, which demonstrated excellent rectifying property large MR, and photovoltaic effect.
基金
supported by the National Natural Science Foundation of China(Grant Nos.10774146,10974205,10904150 and 11274313)
Anhui Provincial Natural Science Foundation(Grant No.1208085MA06)
Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences' Large-scale Scientific Facility(Grant No. U1232138)
support by the National Key Basic Research(Grant No. 2011CBA00111)
