摘要
The exchange bias （EB） has been investigated in magnetic materials with the ferromagnetic （FM）/antiferromagnetic （AFM） contacting interfaces for more than half a century. To date, the significant progress has been made in the layered magnetic FM/AFM thin film systems. EB mechanisms have shown substantive research advances. Here some of the new advances are introduced and discussed with the emphasis on the influence of AFlVl layer, the interlayer EB coupling across nonmagnetic spacer, and the interlayer coupling across AFlVl layer, as well as EB related to multiferrioc materials and electrical control.
The exchange bias(EB) has been investigated in magnetic materials with the ferromagnetic(FM)/antiferromagnetic(AFM) contacting interfaces for more than half a century.To date,the significant progress has been made in the layered magnetic FM/AFM thin film systems.EB mechanisms have shown substantive research advances.Here some of the new advances are introduced and discussed with the emphasis on the influence of AFM layer,the interlayer EB coupling across nonmagnetic spacer,and the interlayer coupling across AFM layer,as well as EB related to multiferrioc materials and electrical control.
基金
supported by China National Funds for Distinguished Young Scientists (Grant No. 51025103)
the National Basic Research Program of China (Grant Nos. 50872118 and 58021001)
