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Influence of pyrolysis temperature on structure and dielectric properties of polycarbosilane derived silicon carbide ceramic 被引量:2

热解温度对聚碳硅烷转化SiC陶瓷结构及介电性能的影响(英文)
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摘要 β-SiC ceramic powders were obtained by pyrolyzing polycarbosilane in vacuum at 800-1200 °C. The β-SiC ceramic powders were characterized by TGA/DSC, XRD and Raman spectroscopy. The dielectric properties of β-SiC ceramic powders were investigated by measuring their complex permittivity by rectangle wave guide method in the frequency range of 8.2-18 GHz. The results show that both real part ε′ and imaginary part ε″ of complex permittivity increase with increasing pyrolysis temperature. The mechanism was proposed that order carbon formed at high temperature resulted in electron relaxation polarization and conductance loss, which contributes to the increase in complex permittivity. 采用真空高温裂解聚碳硅烷法制备β-SiC陶瓷粉末,并对热解产物进行TGA/DSC、XRD和拉曼光谱表征。通过矩形波导法测量β-SiC陶瓷粉末与石蜡复合材料在8.2-18 GHz下的复介电常数来研究其介电性能。结果表明:复介电常数的实部与虚部均随着热解温度的升高而增大。高温下产生的石墨碳引起的电子松弛极化及电导损耗是复介电常数的实部与虚部增大的主要原因。
出处 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2012年第11期2726-2729,共4页 中国有色金属学报(英文版)
基金 Project (50572090) supported by the National Natural Science Foundation of China Project (KP200901) supported by the Fund of the State Key Laboratory of Solidification Processing, China
关键词 silicon carbide ceramic polycarbosilane derived SiC dielectric properties pyrolysis temperature free carbon complexpermittivity SiC陶瓷 聚碳硅烷转化SiC 介电性能 热解温度 自由碳 复介电常数
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  • 1HUO J, WANG L, YU H J. Polymeric nanocomposites for electromagnetic wave absorption [J]. J Mater Sci, 2009, 44: 3717-3927.
  • 2ZHAO D L, LUO F, ZHOU W C. Microwave absorbing property andcomplex permittivity of nano SiC particles doped with nitrogen [J]. J Alloys Compd, 2010, 490: 190-194.
  • 3JIAO H, ZHOU W C, LUO F. Synthesis and dielectric properties of nano Si/C/N powders [J]. J Mater Chem, 2002, 12: 2459-2462.
  • 4SU X L, ZHOU WC LI Z M, LUO F, DU H L, ZHU D M. Preparation and dielectric properties of B-doped SiC powders by combustion synthesis [J]. Mater Res Bull, 2009, 42: 880-883.
  • 5LI Z M, ZHOU W C, SU X L, LUO F, ZHU D L, LIU P L. Preparation and characterization of aluminum-doped silicon carbide by combustion synthesis [J]. JAm Ceram Soc, 2008, 91: 2607-2610.
  • 6JIN H B, CAO M S, ZHOU W, AGATHOPOULOS S. Microwave synthesis of Al-doped SiC powders and study of the dielectric properties [J]. Mater Res Bull, 2010, 45: 247-250.
  • 7LI D, JIN H B, CAO M S, CHEN T, DOU Y K, WEN B. Production of Ni-doped SiC nanopowders and their dielectric properties [J]. J Am Ceram Soc, 2011, 94:1523-1527.
  • 8COLOMOB" P, MERA G, RIEDEL R, SORARU G D. Polymer-derived ceramics: 40 years of research and innovation in advanced ceramics [J]. J Am Ceram Soc, 2010, 93:1805-1837.
  • 9BUNSELL AR, PIANT A. A review of the development of three generations of small diameter silicon carbide fibres [J]. J Mater Sci, 2006, 40: 823-839.
  • 10LIU H T, CHENG H F, WANG J, TANG G P. Effects of the single layer CVD SiC interphases on the Mechanical Properties of the SiCICSiC composites fabricated by PIP process [J]. Ceram Inter, 2010, 36: 2033-2037.

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