摘要
新一代绝缘栅双极型晶体管(IGBT)的关断速度越来越快,有些IGBT的电流下降时间已经缩短至50 ns内。虽然这样有利于提高IGBT的开关频率,但也会带来一些问题。短路情况下的硬关断所产生的过高电压尖峰足以击穿IGBT。为抑制高电压尖峰的产生,主要描述了在大功率IGBT发生短路的情况下,通过改变门极电阻来实现IGBT软关断的方案,并给出了该方案的具体实现方法。硬短路和软短路情况下的实验结果证明所提出的方案是有效可行的。
The new generation of insulated gate bipolar transistor （IGBT） becomes faster and faster with the collector current fall time of less than 50 ns.This will help improve the IGBT switching frequency, but bring some problems. The voltage spikes caused by hard-shutdown under short-circuit conditions will become high enough to breakdown the IGBT.In order to suppress the high voltage spikes, a method to achieve soft shut down by changing the gate resis- tances in the case of high power IGBT short-circuit is presented and the specific implementation is proposed.The ex- perimental results under the two types of short-circuit condition show that the proposed scheme is feasible and effective.
出处
《电力电子技术》
CSCD
北大核心
2012年第12期46-48,共3页
Power Electronics
关键词
绝缘栅双极型晶体管
变门极电阻
软关断
insulated gate bipolar transistor
variable gate resistances
soft shut down
