摘要
应用离子注入工艺可制备获得线性电流大、窗口死层薄的硅pin辐射探测器。首先简要介绍了离子注入工艺形成pn结的原理,重点根据技术要求进行了离子注入工艺设计和计算,分别得到了注入能量为40 keV和注入剂量为4×1014/cm2的两个重要控制参数。同时分析了在离子注入工艺中存在的影响因素和相应处理方法,对生产具有良好的指导作用。采用所设计的工艺参数制备获得的硅pin辐射探测器各项技术指标均满足要求,验证了离子注入工艺设计与参数控制的有效性。
The ion implantation can be used for the fabrication of silicon pin radiation detectors with thin sensitive window and large linear current. The principle of the pn junction formed by the ion implantation was introduced briefly. According to the technical requirements, the ion im- plantation process was designed and calculated. And the two important control parameters, the implantation energy of 40 keV and the implantation dose of 4 X 1014/cm2 , were obtained respec- tively. Meanwhile, the influence factors and corresponding methods were analyzed, which gives a good guide for the production. The silicon pin radiation detector was fabricated using the de- signed process parameters. And the each technical index could meet the requirement. The validi- ties of the process design and parameter control for ion implantation were verified.
出处
《微纳电子技术》
CAS
北大核心
2012年第12期824-828,共5页
Micronanoelectronic Technology
关键词
离子注入
硅pin辐射探测器
PN结
注入能量
注入剂量
死层
ion implantation
silicon pin radiation detector
pn junction
implantation energy^implantation dose
dead layer
