Electroluminescence Orientation in InGaN/GaN LED on Nano-patterned Sapphire by MOCVD
Electroluminescence Orientation in InGaN/GaN LED on Nano-patterned Sapphire by MOCVD
摘要
A 385 nm InGaN/GaN LED on the sapphire with the nano-pattem was fabricated and its electroluminescence property was investigated in a three-dimensional （3D） space. The experimental results showed that the luminescent intensity of the LED was obviously oriented based on the nano-pattem of the sapphire substrate. And the optical interference was used to explain the luminescence orientation of the LED on the nano-pattemed substrate.
A 385 nm InGaN/GaN LED on the sapphire with the nano-pattem was fabricated and its electroluminescence property was investigated in a three-dimensional （3D） space. The experimental results showed that the luminescent intensity of the LED was obviously oriented based on the nano-pattem of the sapphire substrate. And the optical interference was used to explain the luminescence orientation of the LED on the nano-pattemed substrate.
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