摘要
本文研究了微波晶体管电流增益H_FE和基极电流非理想因子n随温度变化的机理,给出了电流增曾H_FE的温度模型,指出:(1)中电流时电流增益H_PE具有正温度系数,而在小电流时随温度上升迅速增大,在大电流时增大减缓,并会出现负增值,(2)基极电流非理想因子n具有负温度系数.实验结果和理论分析一致.
In this paper, the basic mechanism of the temperature dependence of the current gain HFE and the nonideal component n of base current in microwave transistors are investigated, and the temperature model of HFE is also presented. The paper indicates: (1) The current gain HFE at the middle current has a positive temperature coefficient and increases more rapidly at the low current; but at the high current, it increases slowly or even decreases. (2) The nonideal component n of base current has a negative coefficient. The experimental results are ia good accord with the theoretical analysis.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第2期179-185,共7页
Research & Progress of SSE
