摘要
栅绝缘层的表面性质对有机场效应晶体管(OFETs)的半导体薄膜的形貌、晶粒生长的有序性和载流子的传输有着重大的影响.研究表明,通过改进栅绝缘层的表面性质,可以有效提高有机场效应晶体管的迁移率.本文综述了OFETs绝缘层表面的粗糙度和表面能对OFETs迁移率的影响,重点探讨了栅绝缘层表面修饰常用的方法,即自组装单层(SAMs)修饰和聚合物修饰与迁移率改进之间的研究进展.最后,展望了该研究方向未来可能的发展趋势.
The surface property of the dielectric has a significant influence on growth, morphology, order of the organic semiconductor, and charge carrier transport. The relevant research shows that the mobility of organic field-effect transistor could be effectively improved via ameliorating the surface property of the dielectric. The purpose of this review is to introduce the main factors, including the roughness and the surface energy of dielectric, which exert a tremendous influence on the field effect mobility of OFET, and chiefly describe the progress of the two common methods used for the dielectric modification, viz., the self-assembled monolayer modification and the polymer modification. Finally, the novel applications at present are summarized in this review and some perspectives on the research trend are proposed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第22期570-581,共12页
Acta Physica Sinica
基金
国家重点基础研究发展计划(批准号:2009CB930600
2012CB933301
2012CB723402)
国家自然科学基金(批准号:61077070
21144004
60977023)
教育部博士点基金(批准号:20113223120003)
江苏省自然科学基金(批准号:BK2011761
SBK201122680)
江苏省高校自然科学基础研究面上项目(批准号:11KJB510017)
南京邮电大学人才科研启动基金(批准号:NY211022
NY210002
NY210030)
江苏省高校优秀科技创新团队(批准号:TJ209035)~~
关键词
有机场效应晶体管
场效应迁移率
栅绝缘层
表面修饰
organic field-effect transistors, field-effect mobility, insulating layer, surface modification
