摘要
采用模拟计算的方法,运用量子点模型对GaN基LED器件中不同尺寸量子点的电致发光光谱进行模拟分析,并对器件结构中电子空穴浓度,辐射复合强度进行了研究.分析结果显示,随着量子点尺寸的增大,量子点发光波长存在红移,当圆柱状量子点半径从1.8nm增长到13nm时,波长红移309.6meV,在量子阱中生长单一尺寸的量子点可以达到不同波长的单色发光器件,而在不同量子阱中生长不同尺寸的量子点可以实现多波长发光,以及单颗LED的白色显示,并通过调节量子点的分布密度达到调节各发光波长强度的目的.结果表明,量子点分布密度调节之后多波长发光均匀性得到有效改善.
A theoretical simulation of electrical and optical characteristics of quantum dot （QD） light-emitting diodes depending on the QD sizes is conducted with APSYS software. The electron and hole concentration in the LED and the radioactive recombination rate are studied. Simulation results show that with the increase of the QD size, the emission wavelength has a red shift. With the radius of QD increasing from 1.8 nm to 13 nm, the red shift of emission wavelength has reaches 309.6 meV. The use of the QDs with different sizes planted in quantum well can achieve full-color display with a single LED. When different quantum wells are planted with different QDs, the LED turns into a muff-wavelength luminescence even white LED. We can improve the intensity of each wavelength by adjusting the surface density of QDs. The luminous uniforming of the muti-wavelength LED can be effective improved by adjusting the QD surface density.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第22期409-414,共6页
Acta Physica Sinica
基金
国家自然科学基金(批准号:60877069)
广东省战略性新兴产业专项资金LED产业项目(批准号:2011A081301004
2012A080304006)资助的课题~~
