摘要
采用高能球磨法及脉冲激光沉积法(PLD)分别制备了不同浓度的Ho3+∶Al2O3纳米粉体及薄膜,利用X射线衍射仪(XRD)、分光光度计、荧光光谱仪等分析手段研究了Ho3+离子掺杂对Al2O3结构及发光性能的影响。XRD图谱显示粉体样品为六方α-Al2O3结构,薄膜样品为体立方γ-Al2O3结构。1wt%Ho3+掺杂的Al2O3纳米粉体在454nm、540nm附近出现由Ho3+离子能级跃迁引起的吸收峰。采用579nm的激发光源对样品进行荧光光谱检测,发现两种样品在466～492nm波段均出现F+心所引起的缺陷发光峰,且发光峰的强度随Ho3+浓度的增加而增强。
Ho3＋∶Al2O3 nano-powders and Ho3＋∶Al2O3 thin films were prepared by high-energy ball milling and pulsed laser deposition（PLD） repectively.The structure and optical properties were investigated by means of X-ray diffractometer（XRD）,spectrophotometer,fluorescence spectrometer.The XRD patterns show the hexagonal α-Al2O3 structure of nano-powders and the cubic γ-Al2O3 structure of films.The absorption spectra of 1wt% Ho3＋∶Al2O3 nano-powder show new absorption peaks at 454 nm and 540 nm caused by the level transition of Ho3＋ ions.Using the excitation source with a wavelength of 579 nm,the photoluminescence（PL） spectra of all the samples show an emission band between 466 nm and 492 nm,which is ascribed to the absorption of F＋ color center,and upon increasing Ho3＋ incorporation,the intensity of those peaks are accordingly enhanced.
出处
《半导体光电》
CAS
CSCD
北大核心
2012年第5期686-689,共4页
Semiconductor Optoelectronics
基金
沈阳理工大学博士启动专项基金项目(沈理工科[2008]20号)
