摘要
以四异丙醇钛为原料 ,氧气作反应气体 ,高纯氮气作载气 ,采用低压MOCVD法在单晶Si基片上制备出了TiO2 薄膜。研究了基片温度和氧气流量对TiO2 薄膜沉积速率的影响 ,以及基片温度和退火温度对TiO2 薄膜的结构的影响。采用X射线衍射和喇曼光谱对TiO2 薄膜的结构进行分析。实验表明 :基片温度在1 1 0℃～ 2 5 0℃时制备的TiO2 薄膜是非晶态的 ,在 35 0℃～ 5 0 0℃时制备的TiO2 薄膜为锐钛矿和非晶态混杂结构 ,当基片温度超过 6 0 0℃时开始生成金红石。
Titanium dioxide thin films were deposited on Si substrate by low pressure?MOCVD from titanium isopropoxide.The deposition rates of the films have been studied as functions of process parameters such as substrate temperature and oxygen flow?rate.Structural properties of the films have also been studied as functions of substrate temperature and annealing temperature.The results show that films deposited onto Si substrate are amorphous at 110～250℃,a mixture of anatase and amorphous at 350～500℃,and a mixture of anatase and rutile above 600℃.
出处
《微细加工技术》
EI
2000年第3期63-69,共7页
Microfabrication Technology
关键词
MOCVD
二氧化钛
薄膜
MOCVD
titanium dioxide
thin films
preparation
structural properties
