摘要
在本文中 ,一方面对电路参数与硅光电负阻器件的光学双稳态开关时间的关系进行了研究 ,另一方面对器件在低、中、高三个不同输入光强区的光学双稳态响应的变化趋势进行了研究 .硅光电负阻器件包括有各种类型 ,本文主要对“λ”型双极光电负阻晶体管 (PLBT)
In this paper,the relationship of circuit parameters and the optical bistability swithcing time of silicon photo electronic negative resistance device is studied.The varying response to low,medium,high light input intensity regions is also studied.There are many kinds of devices in silicon photo electronic negative resistance device.In this paper,the type of Photo Lambda Bipolar Transistor (PLBT) with resistance load and photo diode load is discussed.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2000年第8期66-68,71,共4页
Acta Electronica Sinica
基金
集成光电子学国家重点联合实验室!(中科院半导体所 )开放课题
国家自然科学基金!(No.698962 60 )
关键词
硅光电负阻器件
PLBT
光双稳开关时间
silicon photo electronic negative resistance device
photo lambda bipolar transistor (PLBT)
the optical bistability switching time
