摘要
金属有机化合物汽相沉积 (MOCVD)技术是制备用于红外焦平面阵列 (IRFPA)的高质量碲镉汞 (HgCdTe)薄膜材料的重要手段。文中讨论了汞源温度、生长温度、衬底材料及互扩散多层工艺 (IMP)等因素在MOCVD外延生长碲镉汞薄膜过程中的作用机理 ,并选择合适的生长条件获得了质量优良的碲镉汞薄膜。
Metalorganic chemical vapour phase deposition (MOCVD) is a very important technique to grow high quality HgCdTe films for fabrication of infrared focal plane arrays (IRFPAs).In this paper, the function and mechanism of mercury souce temperature ( T Hg ),growth temperature ( T G),substrate materials and the interdiffused multilayer process (IMP) during the growth procedure on HgCdTe epitaxial film by MOCVD are discussed briefly. Based on the discussion, high quality HgCdTe films are grown by choosing suitable growth technology of MOCVD.
出处
《半导体光电》
CAS
CSCD
北大核心
2000年第4期256-260,共5页
Semiconductor Optoelectronics
关键词
MOCVD
碲镉汞薄膜
外延生长
MOCVD
HgCdTe film
substrate material
growth technology
