摘要
对单光子雪崩二极管的雪崩建立与淬灭理论模型进行改进,使雪崩击穿过程中载流子数目能反映雪崩的特点,进而使其理论模型中的负载电阻值与实验所使用的阻值更加接近。通过对载流子增加方式及数量统计的改进,数值仿真表明,模型中负载所用的淬灭电阻可以从原来的8 kΩ提高到100 kΩ,并且雪崩及淬灭所用的时间与实验结果也更加吻合。此外,单光子雪崩二极管两端的反向偏置电压的高低对雪崩脉冲响应的幅度有影响。
The avalanche breakdown development and quenching theoretical model of single-photon avalanche diodes is improved in this paper.The aim is to make this model more in line with the avalanche multiplication characteristics of the carriers,and match the resistance of the theoretical model with the actual load resistance.Through improving the increasing mode and statistics of the number of carriers,the simulation results show that,the quenching load resistance of the model is increased from 8 kΩ to 100 kΩ in the enhanced model,and the development and quenching of the avalanche is more close to the actual time.In addition,the reverse bias voltage of the single-photon avalanche diode can affect the magnitude of the impulse response signal.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2012年第5期428-432,共5页
Research & Progress of SSE
基金
湖南省自然科学基金重点资助项目(11JJ2036)
湖南省教育厅资助科研项目重点资助项目(11A116)
关键词
单光子雪崩二极管
盖革模式
淬灭
负载电阻
雪崩模型
single-photon avalanche diode
Geiger-model
quench
load resistance
avalanche model
