摘要
基于对复能带结构的考虑,给出了扶手椅型石墨烯纳米带场效应管的量子输运计算结果,并比较了ID-VG曲线所给出的最小泄漏电流值与ID-VD曲线所给出的开电流值。对于纳米尺度下的石墨烯纳米带场效应管,为了获得最佳性能,指出在关状态下的泄漏电流与开电流之间存在某种折衷,也就是说,ID-VG曲线给出的较小/大的关状态泄漏电流可能伴随着ID-VD曲线的一个较小/大的开电流。随后利用复能带的特性对此作了解释。
This paper shows the ballistic quantum transport calculation results for the armchair graphene nanoribbon field effect transistors based on full complex band structure.Then the minimum leakage current in the ID-VG curve and the on current in the ID-VD curve are compared.It is demonstrated that in order to have the best performance of the nanoscale graphene nanoribbon field effect transistors,tradeoffs are found for the off state leakage current and the on state current,i.e.,a smaller/larger off state leakage current in IDVG curve may be accompanied with a smaller/larger on current in ID-VD curve,which is then explained by full complex band structure characteristics.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2012年第5期424-427,共4页
Research & Progress of SSE
基金
中央高校基本科研业务费专项资金资助项目(YWF-10-02-040)
北京市自然科学基金资助项目(4122045)
关键词
复能带结构
量子输运
石墨烯纳米带场效应管
开关电流
complex band structure
quantum transport
graphene nanoribbon fieldeffect transistor
on-off current
