摘要
以单晶硅(111)为衬底,以等离子体增强化学气相沉积技术制备的非晶硅薄膜为前驱物,采用YAG激光晶化技术实现从非晶硅薄膜到纳米晶硅薄膜的相变过程。采用X射线衍射仪和原子力显微镜对YAG激光晶化薄膜进行了表征与分析。结果表明:薄膜的晶粒尺寸在纳米级;随着激光脉冲频率的增加,晶粒尺寸先变大后变小,其最佳结晶频率区间为10～12 Hz。
The amorphous silicon（a-Si） thin films,as a precursor,were grown on Si（111） by plasma-enhanced chemical vapor deposition（PECVD）.Then the phase transition from a-Si to nano-Si was performed by YAG laser crystallization.The laser crystallized thin films were characterized with XRD and AFM.The results show that the grain size is at the nanoscale and the grain size first becomes larger and then smaller with the pulse frequency increasing.The best crystallizing laser frequency is in the range of 10～12 Hz.
出处
《应用激光》
CSCD
北大核心
2012年第5期412-415,共4页
Applied Laser
基金
江苏省高校自然科学基金资助项目(项目编号:10KJB460006)
南通市科技应用研究计划资助项目(项目编号:K2010010)
关键词
激光晶化
非晶硅
薄膜
晶粒
laser crystallization
amorphous silicon
thin film
grain
