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关于提高发光二极管出光效率途径的探讨 被引量：1

Investigation on Enhancement of the Output Efficiency of Light-Emitting-Diodes
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摘要 提高发光二极管(LED)的出光效率是当前的一个研究热点。本文首先讲述了LED的发光原理以及影响LED出光效率的内量子效率、外量子效率概念,分析了几种常见的提高LED外量子效率的途径,生长分布布拉格反射层结构、表面粗化技术、倒装芯片技术,重点探讨利用光子晶体提高LED出光效率的原理及其优势。 The research on improving the light-emitting efficiency of light-emitting-diodes is a hotspot.This paper presents the light principle of LED,the internal quantum efficiency and the external quantum efficiency.Several approaches to enhance the external quantum efficiency of LED are discussed,such as growth of distributed Bragg reflector（DBR） tabricating,surface roughening,flip-chip.And we pay more attention to the principle and the advantage of LED with photonic crystal.
作者 胡森 刘丹
机构地区 湖北第二师范学院物理与电子信息学院
出处 《湖北第二师范学院学报》 2012年第8期57-60,共4页 Journal of Hubei University of Education
关键词 发光二极管 外量子效率 光子晶体 light-emitting diodes external quantum efficiency photonic crystal
分类号 TN312 [电子电信—物理电子学]
  • 相关文献

参考文献6

  • 1李刚.半导体照明发光二极管(LED)芯片制造技术及相关物理问题[J].物理,2005,34(11):827-833. 被引量：11
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  • 6Sung Jin An, Jee Hae Chae, et al. Enhanced Light Output of GaN- Based Light- Emitting Diodes with ZnO Nanorod Arrays [J].Appl. Phys. Lea., 2008,92:121108.

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共引文献14

同被引文献9

  • 1宋贤杰,屠其非,周伟,周太明.高亮度发光二极管及其在照明领域中的应用[J].半导体光电,2002,23(5):356-360. 被引量：53
  • 2P. H. Chen,Li Chuan Chang,C. H. Tsai.GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region[].IEEE Journal of Quantum Electronics.2010
  • 3Chun-Min Lin,Chia-Feng Lin,Bing-Cheng Shieh.InGaN-Based Light-Emitting Diodes With a Sawtooth-Shaped Sidewall on Sapphire Substrate[].IEEE Photonics Technology Letters.2012
  • 4Chen, J.J.,Su, Y.K.,Lin, C.L.,Chen, S.M.,Li, W.L.,Kao, C.C.Enhanced output power of GaN-based LEDs with nano-patterned sapphire substrates[].IEEE Photonics Technology Letters.2008
  • 5Ray-Hua Horng,Hung-Lieh Hu,Sin-Liang Ou.Enhancement of Light Extraction for InGaN LEDs by Means of Beveled Sapphire and Cup-Shaped Copper Sheeting[].IEEE Photonics Technology Letters.2012
  • 6Gao, Haiyong,Yan, Fawang,Zhang, Yang,Li, Jinmin,Zeng, Yiping,Wang, Guohong.Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale[].Journal of Applied Physics.2008
  • 7Tsai, Chun-Fu,Su, Yan-Kuin,Lin, Chun-Liang.Improvement in external quantum efficiency of InGaN-based LEDs by micro-textured surface with different geometric patterns[].Journal of the Electrochemical Society.2012
  • 8崔林,汪桂根,张化宇,周福强,韩杰才.用于GaN基发光二极管的蓝宝石图形衬底制备进展[J].无机材料学报,2012,27(9):897-905. 被引量：13
  • 9王尔镇.新世纪照明用白色LED光源[J].真空电子技术,2002,15(2):20-24. 被引量：19

引证文献1

湖北第二师范学院学报
2012年 第8期

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