摘要
研究了和平面刻槽离子阱中的电压热涨落噪声引起的离子加热和离子加热的直接计算模型,给出了离子加热的加热尺度,并利用有限元分析方法计算了当刻槽宽度和射频电极宽度比例α发生变化时加热尺度的变化。同时,还利用涨落耗散原理计算了控制电极的阻抗热涨落对离子产生的加热效应,并给出了x和y方向电场涨落的谱密度表达式,通过计算给出了较好的α值。
The ion heating by voltage fluctuation noise in grooved planar ion trap is investigated. The direct method is used to calculate the ion heating and the length scale is obtained. The variation of length scale with ratio between width of groove and radio frequency electrode varied is calculated by using finite element method. And then the ion heating by resistance thermal fluctuation of control electrodes is also calculated by using fluctuation dissipation theorem. The spectral density of electric field fluctuation in x and y direction and better value of a are obtained.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2012年第10期259-263,共5页
Acta Optica Sinica
基金
国家自然科学基金(10974212)资助课题
关键词
量子光学
量子信息处理
离子芯片
有限元分析方法
热涨落噪声
离子加热
quantum optics
quantum information and processing
ion chip
finite element analysis method
thermal fluctuation noise
ion heating
