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基于半残次硅片的太阳电池性能研究 被引量:1

Functional Research of Solar Cell on the Basis of Semi-Defective Silicon Wafer
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摘要 选取了在硅片加工过程中产生的线痕片、厚片、薄片、崩片和TTV片共5种类型的半残次硅片,制备了太阳能电池,并在中山大学太阳能系统研究所进行了太阳电池片的实验研究,分析了这些残次片电池的开路电压、短路电流、填充因子、转换效率,研究结果表明,半残次硅片所制备的太阳电池性能良好:这些电池片的平均转换效率都达到了15.80%以上,填充因子可达73.98%,短路电流在5.10~5.28A之间,开路电压在0.62V以上,对于降低太阳电池成本具有一定参考价值. The solar cells,fabricated by the semi-defective silicon wafers and produced during the processing,have been studied in this paper.Five types of semi-defective silicon wafers,including line scored wafer,thickness wafer,thin wafer,disintegrating wafer,and total thickness variety wafer,have been chosen for functional research.The characteristics of these solar cells,including open voltage,short circuit current,filling factor and conversion efficiency have been analyzed.The results show that the average conversion efficiency,filling factor,open voltage reach above 15.8%,73.98% and above 0.62V,respectively.The short circuit current ranges from 5.10-5.28A.Therefore,our studies on the solar cell fabricated by the semi-defective silicon wafers have great significance in cutting the cost of solar cell.
出处 《西南师范大学学报(自然科学版)》 CAS CSCD 北大核心 2012年第10期123-126,共4页 Journal of Southwest China Normal University(Natural Science Edition)
基金 四川省科技厅院级合作项目(10ZC1914) 四川省科技厅重大技术支撑项目(10ZC1893)
关键词 半残次片 太阳电池 转换效率 开路电压 短路电流 填充因子 Semi-defective silicon wafer solar cell conversion efficiency open voltage short circuit current filling factor
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  • 1Ai B,Shen H,Liang Z C,et al.Electrical properties of B-doped pol-ycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition[].Thin Solid films.2006
  • 2Tüzün,Qiu Y,Slaoui A,et al.Properties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickening[].Solar Energy Materials.2010
  • 3Endo Y,Fujiwara T,Ohdaira K,et al.Thin-film polycrystalline sili-con solar cells formed by flash lamp annealing of a-Si films[].Thin Solid films.2010
  • 4Carnel L,Gordon I,Van Gestel D,et al.Thin-film polycrystalline silicon solar cells on ceramic substrates with a Voc above500mV[].Thin Solid films.2006
  • 5Swatowska B,Stapinski T.Amorphous hydrogenated silicon-nitride films forapplications in solar cells[].Vacuum.2008
  • 6Zhu H,Kalkan A K,Hou J,et al.Applications of AMPS-1D for solar cell simulation[].AIP Conference Proceedings.1999
  • 7Hernández-Como N,Morales-Acevedo A.Simulation of hetero-junction silicon solar cells with AMPS-1D[].Solar Energy Materials.2010
  • 8Walsh K M.A new approach to the effective use of intrinsic a-Si:H in thin film solar cells[].J Phys D-Appl Phys.2007
  • 9Kabir M I,Ibrahim Z,Sopian K,et al.Effect of structural variations in amorphous silicon based single and multi-junction solar cells from numerical analysis[].Solar Energy Materials.2010
  • 10Madan A,Morrison S.High deposition rate amorphous and poly-crystalline silicon materials using the pulsed plasma and Hot-Wire CVD techniques[].Solar Energy Materials.1998

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  • 1YANG S,LEI Q,PENG F Z,et al.A robust control scheme for grid-connected voltage-source inverters[J].IEEE Transactions on Industrial Electronics,2011,58(1):202-212.
  • 2LEE K J,PARK B G,KIM R Y,et al.Robust predictive current controller based on a disturbance estimator in a threephase grid-connected inverter[J].IEEE Transactions on Power Electronics,2012,27(1):276-283.
  • 3LI R,MA Z,XU D.A ZVS grid-connected three-phase inverter[J].IEEE Transactions on Power Electronics,2012,27(8):3595-3604.
  • 4MIRAFZAL B,SAGHALEINI M,KAVIANI A K.An SVPWMbased switching pattern for stand-alone and grid-connected three-phase single-stage boost inverters[J].IEEE Transactions on Power Electronics,2011,26(4):1102-1111.
  • 5胡兵,张彦虎,赵为,张友权.光伏发电逆变器拓扑及关键技术综述[J].电力电子技术,2013,47(3):18-20. 被引量:8
  • 6申中鸿,杨林,蒋春旭.一种电流源型三相逆变器模型[J].电气自动化,2014,36(5):12-14. 被引量:4

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