摘要
在真空度为 1 3 3 .3μPa时 ,用真空气相沉积方法在玻璃衬底上沉积 Sn O2 薄膜 .通过XRD、SEM等测试分析 ,研究了杂质掺杂及热处理前后的 Sn O2 薄膜的结构、晶粒尺寸、电学特性以及不同工艺条件对薄膜性能的影响 .结果表明 ,掺 Bi有效地抑制了晶粒生长 ,提高了薄膜的稳定性 .掺 Bi后 ,薄膜的电学特性增强 ,而掺 In、Cd则影响不大 .
The SnO 2 thin films have been obtained on glass substrate by using vacuum vapor deposition when the vacuum pressure is 133.3 μPa.By measurement and analysis with the aids of XRD,SEM etc.,the structure,grain size,electrocharacteristics,and the effects of the different technological conditions are studies in different dopants before and after heat treatment.The results show that the growth of the grain size is restrained when Bi is doped.The electrocharacteristics of the films is increased when Bi is doped but hardly changed when In,Cd is doped.
出处
《内蒙古大学学报（自然科学版）》
CAS
CSCD
2000年第4期376-379,共4页
Journal of Inner Mongolia University：Natural Science Edition
基金
国家自然科学基金资助项目
