摘要
首先采用真空蒸镀法制备了不同厚度的铜薄膜,并对薄膜进行了退火处理;然后用X射线衍射仪测定铜薄膜的衍射谱,最后采用线形分析法对衍射谱进行计算,得到了不同厚度铜薄膜退火前后的晶粒尺寸和微应变。结果表明:真空蒸镀铜薄膜晶粒尺寸随薄膜厚度的增加而增大,微应变随薄膜厚度的增加而减小;退火处理后薄膜晶粒明显长大,薄膜微应变在退火处理后明显减小。
Copper thin films with diffrent thickness were prepared by method of physical vapor deposition （PVD）, and then the films were annealed in vacuum environment. The X-ray diffraction spectrum were measured by X-ray diffractometer and analyzed by line profile analysis to calculate the crystalline size and microstrain of the prepared copper thin films before and after annealing. The results show that with the increase of the thin film thickness, the crystalline size increased and the microstrain decreased. And after annealing, crystalline size of the thin films obviously grew and the microstrain obviously reduced.
出处
《理化检验（物理分册）》
CAS
2012年第8期508-511,共4页
Physical Testing and Chemical Analysis(Part A:Physical Testing)
基金
国家自然科学基金资助项目(50871016)
关键词
铜薄膜
X射线衍射线形分析
晶粒尺寸
微应变
copper thin film
X-ray diffraction line profile analysis
crystalline size
microstrain
