摘要
分析了光MOS固体继电器在电离辐照条件下的失效模式,并针对组成器件的不同元器件提出了抗辐射的设计方案。采取了包括优化材料、合理设计器件结层厚度、选用抗辐射能力强的钝化膜等工艺技术制作样品,并通过试验对比确认了抗辐射方案的有效性,结果表明,器件抗辐照能力大于30krad(Si),能够满足对星用光MOS固体继电器抗辐射能力的要求。
The failure modes of photo MOSFEt relay unaer t.~ ~ o -- were studied. Anti-radiation designs for different components were proposed including material optimization, junction design and application of anti-radiation dielectric films. Then photo MOSFETs samples were irradiated using a Co60 source and the anti-radiation ability was improved to be higher than 30 krad（si）. The results indicated that the anti-radiation designs for photo MOSFET are effective and can satisfy the requirement of anti-radiation for photo MOSFETs.
出处
《半导体光电》
CAS
CSCD
北大核心
2012年第4期470-473,共4页
Semiconductor Optoelectronics
