摘要
在Si(100)衬底和Ti/Si(100)衬底上分别制备了ZnO薄膜,探讨了Ti缓冲层对ZnO薄膜结构和缺陷的影响,利用X射线衍射(XRD)测试了ZnO薄膜的晶体结构及择优取向,利用原子力显微镜(AFM)观察ZnO薄膜的表面粗糙度(RMS),利用光致发光(PL)光谱检测了ZnO薄膜的缺陷,利用四探针法测试了ZnO薄膜的电阻率。结果表明,在Ti/Si(100)衬底上、衬底温度350℃的条件下,制备的ZnO薄膜表面光滑、缺陷少、电阻率高且具有高C轴取向。本文这一工作对于压电薄膜缺陷分析及高性能ZnO的声表面波(SAW)器件研制有重要意义。
Highly c-axis oriented ZnO films with uniform grains, smooth surface,less defects and high resistance are necessary for high-performance surface acoustic wave （SAW） devices. In this paper, ZnO thin films were deposited on Si（100） substrates and Ti/Si（100） substrates respectively, and the effects of Ti buffer layer on the structure and defect of the ZnO films are discussed. The microstructure, surface roughness, defect and electrical properties of the ZnO films are characterized by X-ray diffraction （XRD） ,atomic force microscopy （AFM）, photoluminescence （PL） spectroscopy and Four-point probe instrument. The results reveal that the ZnO thin film with Ti buffer layer grown at 350 ℃ exhibits strong c-axis orientation, low root-mean square （RMS） roughness,less defects and high resistivity. This work is of great importance for the defect analysis of piezoelectric films and the development of high-performance ZnO SAW devices.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2012年第9期1760-1767,共8页
Journal of Optoelectronics·Laser
基金
国家自然科学基金(50972105)
国家"863"目标导向类(2009AA03Z444)
天津市支撑重点项目(10ZCKFGX01200)资助项目
