摘要
采用脉冲辉光等离子体离子氮化技术对贫铀表面进行了氮化处理,采用俄歇电子能谱(AES)对氮化层进行元素深度剖析,采用X射线衍射(XRD)、扫描电子显微镜(SEM)对氮化层组织结构进行了分析表征。结果表明:脉冲偏压-900 V,工作氮分压50 Pa、100 Pa,氮化时间2.5 h^4 h下在贫铀表面能获得约20μm厚的氮化层,氮化层为U2N3的单一立方结构且均匀致密,脉冲辉光等离子氮化技术能在贫铀表面实现氮化。
Passive layers of uranium nitride were formed by pulse glow plasma nitriding on depleted uranium surface.Microstructure and composition of the passive layer were investigated by X-ray diffraction and scanning electron microscope（SEM）.Distribution of U,N,O elements on the interface between passive layer and substrate was studied by Auger electron spectrum（AES）.As a result,the passive layer formed by-900V pulse bias,50 Pa and 100Pa nitrogen partial pressure and nitriding 2.5h ~4h is with about 20μm thickness,and composition of the layer is single U2N3 of cubic structure which is uniform and compact.Pulse glow plasma nitriding on depleted uranium surface is feasible.
出处
《真空》
CAS
2012年第4期40-43,共4页
Vacuum
基金
中国工程物理研究院基金资助项目(2011AD301015)
