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Characteristics of a GaN-based Gunn diode for THz signal generation 被引量：2

Characteristics of a GaN-based Gunn diode for THz signal generation
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摘要 A generalized large-signal computer simulation program for a Gunn oscillator has been developed. The properties of a Gunn diode oscillator based on the widely explored GaN, are investigated using the developed program. The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and InP diodes. An output power of 1400 kW/cm^2 is achieved from the GaN Gunn diode, as compared to 4.9 kW/cm^2 from a GaAs diode. A generalized large-signal computer simulation program for a Gunn oscillator has been developed. The properties of a Gunn diode oscillator based on the widely explored GaN, are investigated using the developed program. The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and InP diodes. An output power of 1400 kW/cm^2 is achieved from the GaN Gunn diode, as compared to 4.9 kW/cm^2 from a GaAs diode.
作者 R K Parida N C Agrawala G N Dash A K Panda
机构地区 ITER Rengali College Sambalpur University National Institute of Science&Technology
出处 《Journal of Semiconductors》 EI CAS CSCD 2012年第8期37-43,共7页 半导体学报（英文版）
基金 Project supported by Department of Science and Technology,Government of India through SERC,FIST and TIFAC Program
关键词 Gunn devices semiconductor diodes semiconductor materials POWER GAN Gunn devices semiconductor diodes semiconductor materials power GaN
分类号 TN31 [电子电信—物理电子学]
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参考文献20

  • 1Litinov V, et al. GaN based Terahertz source. Terahertz and gi- gahertz electronics and photonics II. Proc SPIE, 2010, 4111 : 116.
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  • 3Esposto M, Chini A, Rajan S. Analytical model for power switch- ing GaN-based HEMT design. IEEE Trans Electron Devices,2011, 58 (5): 1456.
  • 4Heller E R, Ventury R, Green D S. Development of a versatile physics-based finite-element model of an A1GaN/GaN HEMT capable of accommodating process and epitaxy variations and a librated using multiple DC parameter. IEEE Trans Electron De- vices, 2011, 58(4): 1091.
  • 5Lenka T R, Panda A K. Role ofnanoscale A1N and InN for the mi- crowave characteristics of A1GaN/(A1, In)N/GaN-based HEMT. Semiconductors, 2011,45(5): 650.
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Journal of Semiconductors
2012年 第8期

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