摘要
使用Ｍｏｎｔｅ Ｃａｒｌｏ 模拟方法和器件振荡特性测试研究了异质谷间转移电子器件的直流隧穿特性和射频振荡性能与器件结构参数之间的关系．理论计算结果与实验数据间吻合得很好．在此基础上提出了通过电性能测试来分析器件结构参数的新方法．使用逐层化学腐蚀Ｃ－Ｖ测试测定了有源层的掺杂分布．通过低场电阻测量确定了量子阱的宽度．最后从器件振荡特性与Ｍｏｎｔｅ Ｃａｒｌｏ 模拟曲线的对照中得出了掺杂接口的浓度．由此建立了器件结构参数的一套完整的测试分析方法．使用这套测试监控方法，已成功地研制出ＭＢＥ和ＭＯＣＶＤ工艺的高效。
By using Monte Carlo simulation and oscillation performance measurement, the dependence of d.c. tunneling characteristics and oscillation performance of heterostructure intervalley transferred electron devices on structure parameters is investigated. The theoretical results agree with the experimental data very well. From this investigation we propose a new electrical measuring method to control the devices structure. The doping profile of active layer is measured by the C\|V measurement. The quantum well width may be determined from the electric resistance measurement under low electric field.At last the doping concentration of the doping notch is inferred from the comparison between the oscillation performance and the Monte Carlo simulation curve. All of these measurements constitute a set of methods to control the devices structure parameters, by the help of which the high efficiency and high power oscillating devices have been fabricated.
基金
国家自然科学基金
关键词
纳米结构器件
结构参数
参数测试
Nanometer Structure, Structure Parameters, Measuring Method, Theoretical Calculation
