摘要
研究了零偏压和偏置电压作用下磁量子结构中自旋电子的隧穿输运性质 .结果表明电子自旋输运的性质不仅取决于磁量子结构的构型、入射电子的能量和波矢 ,而且取决于偏置电压 .在零偏压下 ,由等同的磁垒磁阱构成的磁量子结构不具有自旋过滤的特点 ,而由不等同的磁垒磁阱构成的磁量子结构却具有较好的自旋过滤特点 .偏置电压极大地改变了磁量子结构中电子的极化程度 ,使得电子隧穿等同的磁垒磁阱构成的磁量子结构的输运性质也显著地依赖于电子的自旋指向 .
Spin tunneling transport properties of two dimensional electrons through magnetic quantum structures are investigated at zero bias and finite bias. The results indicate that spin dependent features are not only related with the magnetic configuration, the incident electron energy and the wave vector, but also closely related with the applied bias. At zero bias, the magnetic quantum structure composed of identical magnetic barrier and magnetic well does not show spin filtering properties, while the magnetic quantum structure composed of unidentical magnetic barrier and magnetic well shows distinct spin filtering properties. Moreover, the applied bias greatly changes electron spin polarization, which makes the former structure also showing interesting spin dependent features under an applied bias.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第9期1814-1820,共7页
Acta Physica Sinica
基金
国家高技术研究发展计划!(批准号 :715 0 10 0 0 11)
清华大学基础性科研基金!(批准号 :98JC0 82 )&&
关键词
磁量子结构
自旋电子
隧穿输运
半导体
magnetic quantum structures, spin electrons, tunneling transport, spin polarization
