摘要
分析了槽栅器件中的热载流子形成机理 ,发现在三个应力区中 ,中栅压附近热载流子产生概率达到最大 .利用先进的半导体器件二维器件仿真器研究了槽栅和平面PMOSFET的热载流子特性 ,结果表明槽栅器件中热载流子的产生远少于平面器件 ,且对于栅长在深亚微米和超深亚微米情况下尤为突出 .为进一步探讨热载流子加固后对器件特性的其他影响 ,分别对不同种类和浓度的界面态引起的器件栅极和漏极特性的漂移进行了研究 ,结果表明同样种类和密度的界面态在槽栅器件中引起的器件特性的漂移远大于平面器件 .为开展深亚微米和亚 0 1微米新型槽栅CMOS器件的研制奠定了基础 .
In this paper,the hot\|carrier mechanism in grooved\|gate MOS is analyzed at first.It is found that the hot\|carrier effect reaches its highest generate rate under medium gate bias voltage of the three stress areas.Then,the characteristics of hot\|carrier\|effect in grooved\|gate and planar PMOSFET are simulated using advanced 2\|dimensional device simulator.The results show that the hot\|carrier generated in grooved\|gate PMOSFET is far less than in planar PMOSFET,especially for the case of channel length in deep\|sub\|micron and super deep\|sub\|micron region.In order to investigate the other influences of hot\|carrier\|effect immunity on device characteristics,the drift of gate and drain characteristics induced by different interface state is studied for grooved\|gate and planar devices.It shows that the drift induced by same interface state in grooved\|gate MOSFET is far larger than in planar device.This work lays a foundation for the research and design of novel very\|small\|size grooved gate CMOS devices.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第9期1683-1688,共6页
Acta Physica Sinica
基金
国防科技预研基金!(批准号 :99J8.1.1.DZD13 2 )
高等学校博士点基金!(批准号:8070110)&&
