摘要
借助于二维器件模拟软件PISCES -IIB ,通过在某相CCD电极下的耗尽区注入数量可控的电子电荷 ,对埋沟CCD器件电荷容量进行了定量分析。采用此方法对一种沟道宽度为 7μm的CCD信道电荷容量进行了瞬态模拟 ,对不同结深、不同沟道掺杂浓度对CCD电荷容量的影响进行了讨论。得到了此结构工艺参数的初步优化结果 ,即CCD沟道表面掺杂浓度为 3× 10 16cm- 3、结深为 1μm时 ,埋沟CCD的电荷容量可达 6× 10 4 /μm。文章提出的方法适用于其他CCD单元结构电荷容量的模拟。
In terms of two-dimensional device simulator PISCES-IIB,quantitative analysis is made on charge handling capacity of buried-channel charge coupled devices(CCDs) by means of injection of magnitude controllable electrons under the depletion region of a CCD electrode.Transient simulation is carried out for the charge handling capacity of a CCD with channel width of 7 μm,followed by discussion on the effect of different channel junction depth and impurity on charge handling capacity.An optimum is obtained i.e.the maximum charge handling capacity can be up to 6×10 4/μm at CCD channel impurity concentration of 3×10 16 cm -3 and junction depth of 1 μm.
出处
《半导体光电》
CAS
CSCD
北大核心
2000年第A03期36-41,共6页
Semiconductor Optoelectronics
